Author Description

The issue of ECS Transactions will cover diverse aspects of high permittivity and other dielectric materials including their physics, processing, characterization, and applications in nano-electronics and photonics. Special emphasis will be given on high mobility channels including Ge, GeSi, GaAs, InGaAs, InP, GaSb, InGaSb, GaN, and AlGaN channels. Other chapters include new transistor concepts, new memory and gate dielectrics, dielectric deposition and processing, characterization, defects, traps, and reliability, and resistive switching.