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Table of Contents Acknowledgement V 1 Introduction 1 2 Carrier Physics and Junction Electrostatics 3 2.1 Introduction 3 2.2 Crystal Structure and Energy Bands 3 2.3 Carrier Concentration and Fermi Level 10 2.3.1 Intrinsic Semiconductor 13 2.3.2 Extrinsic Semiconductor 15 2.4 Carrier Transport 17 2.4.1 Carrier Drift 18 2.4.2 Carrier Diffusion 23 2.4.3 Resistivity 24 2.5 Bandgap Reduction 25 2.6 Carrier Recombination 29 2.6.1 Carrier Lifetime 34 2.6.2 Carrier Lifetime Control 36 2.6.3 Auger Recombination 44 2.7 Basic Equations in Semiconductor 45 2.8 p-n Junction Electrostatics 47 2.9 Junction Breakdown Phenomena 51 2.9.1 Abrupt p+-n Junction 55 2.9.2 Linearly Graded Junction 57 2.10 Punchthrough Phenomenon 59 2.11 Junction Termination 62 2.11.1 Cylindrical Junction 63 2.11.2 Spherical Junction 65 2.11.3 Floating Field Ring 66 2.11.4 Etched Contour Termination 68 2.11.5 Bevelled Edge Termination 69 2.11.6 Field Plate 72 2.11.7 Junction Termination Extension 72 2.11.8 SIPOS (Semi-insulating Polycrystalline Silicon) Termination 73 2.12 Summary 74 3 Bipolar Junction Diode 78 3.1 Introduction 78 3.2 Basic Junction Diode Theory 81 3.2.1 Forward Conduction 81 3.2.2 Short-base Diode 83 3.2.3 Junction Capacitance 85 3.3 High-Voltage p+-n--n+ Diode 87 3.3.1 Forward Conduction 88 3.3.2 Reverse Blocking 95 3.3.3 Temperature Effect 96 3.4 Schottky Barrier Diode 103 3.4.1 Forward Conduction 106 3.4.2 Reverse Blocking 109 3.5 Ohmic Contact 111 3.6 GaAs and SiC Power Diodes 114 3.7 Switching Characteristics 119 3.7.1 Turn-on Transient 120 3.7.2 Turn-off Transient 123 3.8 MPS (Merged p-i-n/Schottky) Diode 127 3.9Smart-Power Integrated Synchronous Rectifier 128 3.10 Summary 136 4 Power Metal-Oxide-Semiconductor Field-Effect Transistor 141 4.1 Introduction 141 4.2 Basic MOS Physics 142 4.2.1 Flat-band State 144 4.2.2 Accumulation State 144 4.2.3 Depletion State 144 4.2.4 Inversion State 146 4.2.5 MOS Capacitance 147 4.2.6 Threshold Voltage 149 4.3 Static Characteristics 151 4.3.1 Linea