Author Description

As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process.