Author Description

Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization; Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon; Chapter 4: SiC Devices and Device Processing