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Bernard Gil

Low Dimensional Nitride Semiconductors
Group III Nitride Semiconductor Compounds: Physics and Applications
III-Nitride Semiconductors and their Modern Devices
Semiconductor Heteroepitaxy Growth, Characterization and Device Applications: International Conference Held At Montpellier, France 4-7 July 1995, Organised by the "Groupe D'étude Des Semiconducteurs" and the "Laboratoire Central de Recherches de Thomson-CSF"
Physics of Wurtzite Nitrides and Oxides Passport to Devices
Semiconductor Heteroepitaxy Growth, Characterization, and Device Applications : Montpellier, France, 4-7 July 1995
III-Nitride Semiconductors and their Modern Devices
Physics of Wurtzite Nitrides and Oxides
GaN and Related Alloys - 2000: Volume 639
GaN, AIN, InN and their Alloys: Volume 831
Physics of Wurtzite Nitrides and Oxides Passport to Devices
III-Nitride Semiconductors and Their Modern Devices
Physics of Wurtzite Nitrides and Oxides Passport to Devices
GaN and Related Alloys - 2000: Volume 639
GaN, AIN, InN and their Alloys: Volume 831