Author Description

This dissertation, "Numerical Study of Topological Insulators and Semi-metals" by Ruilin, Chu,, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Topological insulators(TIs) constitute a novel state of quantum matter which possesses non-trivial topological properties. Although discovered only in the recent few years, TIs have attracted intensive interest among the community of condensed matter physics and material science. TIs are insulating in the bulk but have conductive gapless edge or surface states on the boundaries, which have their origin in the nontrivial bulk band topology that is induced by the strong spin-orbital interactions in the materials. Existing in all dimensions, TIs exhibit a variety of exotic physics such as quantum spin Hall effect, momentum-spin locked surface states, Dirac fermion transport, quantized anomalous Hall effect, Majorana fermions, etc. In this thesis, I study the transport properties of 2D and 3D TIs by numerical approaches. As an introduction, a brief review of TIs is given. A detailed description of the numerical methods is also presented. The results can be summarized in four aspects. First, disorder is found be able to induce a non-trivial TI from an originally trivial band insulator, where the conductance of a two terminal device drops to nearly zero and then rises to form an anomalous plateau as disorder strength is increased, and finally all the states become localized. The real space Chern number calculation as well as the effective medium theory suggests that disorder is fundamentally responsible for the emerging of the extended helical edge states in this sy