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This clear, student-oriented text is for upper-level or graduate courses covering basic semiconductor physics, physical descriptions of PN-junction diodes, bipolar junction transistors, and MOS Field-effect transistors. The organization is from specific to more general topics with a foundations chapter that reviews critical concepts such as Poisson's Equation, dielectric relaxation, and displacement current. The text progresses toward detailed and often unique coverage: including SPICE modeling of the junction diode, the BJT and MOSFET, ohmic-contact application of the high-low junction, and MOS-capacitance crossover.
This text investigates the fundamental physical principles governing semiconductor devices and their practical applications in modern electronics. Authors B. L. Grung and R. M. Warner Jr. utilize a pedagogical approach that transitions from foundational physics to complex device modeling. The framework emphasizes the physical behavior of PN-junctions, bipolar junction transistors, and MOSFETs, providing students with a rigorous analytical basis for understanding electronic components.
What You Will Find
Scope Limits
Educators and students frequently cite this text for its clear, logical progression from specific device physics to broader modeling applications. Experts highlight the inclusion of SPICE modeling as a valuable bridge between theoretical semiconductor physics and industry-standard design practices.
Page Count:
958
Publication Date:
1995-06-08
Publisher:
Saunders College Publishing
ISBN-10:
003009559X
ISBN-13:
9780030095597
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