The book investigates the complex interplay between semiconductor fabrication processes and the simulation of Metal-Oxide-Semiconductor Very Large Scale Integration (MOS-VLSI) circuits. It addresses the challenges in accurately modeling these intricate systems, drawing upon research presented at a NATO Advanced Study Institute. The content likely focuses on the theoretical underpinnings and computational methods required to predict device behavior and optimize manufacturing techniques for advanced integrated circuits.

This volume, originating from a 1982 NATO Advanced Study Institute, represents a snapshot of the state-of-the-art in MOS-VLSI circuit simulation at that time. The technical nature of the subject matter suggests it was aimed at researchers, engineers, and advanced students in electrical engineering and computer science. Its focus on foundational simulation techniques implies it likely served as a comprehensive reference for understanding the computational challenges and solutions in semiconductor device and circuit design during the early era of VLSI.