This study investigates the impact of nitrogen incorporation into high-k gate dielectrics, specifically HfO2 and HfSiO, to enhance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) performance. The research explores methods for nitrogen doping, including thermal nitridation of silicon prior to HfO2 deposition, which was found to degrade the interface. Consequently, top nitridation was investigated as a means to prevent oxygen and boron diffusion while preserving the high-k/Si interface, leading to improved thermal stability and boron diffusion immunity. The study also examines the use of HfSiON for higher nitrogen concentrations and the effects of high-temperature annealing and NH3 annealing on the dielectric properties and device performance.

This technical paper presents a focused investigation into optimizing high-k gate dielectrics for improved MOSFET performance through nitrogen incorporation. The research details experimental findings on interface properties, thermal stability, and diffusion resistance, suggesting practical methods for material enhancement. The work appears to be aimed at researchers and engineers in the semiconductor industry seeking to advance transistor technology. The detailed analysis of different nitridation techniques and annealing processes provides valuable insights into the material science challenges of next-generation microelectronics.