This collection presents the latest advancements in wide bandgap semiconductor materials and their device fabrication, stemming from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018). The book compiles research on materials such as SiC, GaN, and Ga2O3, detailing progress in bulk and epitaxial growth, material structure and properties, and the development of photoelectron and electronic devices. It aims to provide valuable insights for specialists engaged in the research and design of semiconductor materials and devices. The content reflects the proceedings of a dedicated conference, offering a snapshot of current research trends and findings in the field.

This volume compiles the proceedings of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), suggesting a focus on current research and technical findings within a specialized academic community. The content is likely to be of interest to researchers and engineers actively working in the field of semiconductor materials and device fabrication. As a conference proceeding, it offers a direct view into the state-of-the-art and emerging trends in wide bandgap semiconductor technology.