Author Description

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.