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This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect.The book starts out with the basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It contains material aspects such as band engineering, doping, gating, and a selection of nanostructure fabrication techniques. The book discusses the Drude-Boltzmann-Sommerfeld transport theory as well as conductance quantization and the Landauer-Buttiker theory. These concepts are extended to mesoscopic interference phenomena and decoherence, magnetotransport, and interaction effects in quantum-confined systems, guiding the reader from fundamental effects to specialized state-of-the-art experiments.The book will provide a thorough introduction into the topic for graduate and PhD students, and will be a useful reference for lecturers and researchers working in the field.
This book investigates the fundamental physical principles governing electronic transport within semiconductor nanostructures. Author Thomas Ihn, a specialist in mesoscopic physics, leverages his academic background to synthesize complex quantum phenomena into a cohesive pedagogical framework. The text bridges the gap between foundational solid-state physics and advanced experimental research, providing a rigorous mathematical and conceptual basis for understanding quantum-confined systems.
What You Will Find
Experts and academics recognize this work as a foundational text for graduate-level study in condensed matter physics. Readers frequently note the high level of technical density, making it a standard reference for researchers engaged in experimental semiconductor physics.
Page Count:
576
Publication Date:
2009-11-26
Publisher:
Oxford University Press
ISBN-10:
0199534438
ISBN-13:
9780199534432
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