
With all the clarity and hands-on practicality of the best-selling first edition,this revised version explains the ins and outs of SPICE,plus gives new data on modeling advanced devices such as MESFETs,ISFETs,and thyristors. And because it's the only book that describes the models themselves,it helps readers gain maximum value from SPICE,rather than just telling them how to run the program. This guide is also distinctive in covering both MOS and FET models. Step by step,it takes the reader through the modeling process,providing complete information on a variety of semiconductor devices for designing specific circuit applications. These Pn junction and Schottky diodes; bipolar junction transistor (BJT); junction field effect transistor (JFET); metal oxide semiconductor transistor (MOST); metal semiconductor field effect transistor (MESFET); ion sensitive field effect transistor (ISFET); semiconductor controlled rectifier (SCR-thyristor).
This text investigates the technical methodologies required to accurately model semiconductor devices within the SPICE simulation environment. Author Paolo Antongnetti provides a comprehensive framework for understanding the underlying physics and mathematical representations of various electronic components. By focusing on the models themselves rather than mere software operation, the book enables engineers to optimize circuit design and simulation accuracy.
What You Will Find
Scope Limits
Experts identify this work as a foundational resource for engineers seeking to understand the internal mechanics of SPICE device libraries. Readers frequently note the technical density of the prose, which is tailored for professionals and students with a strong background in semiconductor physics.
Page Count:
416
Publication Date:
1989-01-01
Publisher:
McGraw-Hill
ISBN-10:
0070021538
ISBN-13:
9780070021532
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