This work investigates the precise control of growth, phase, and doping in zinc oxide (ZnO) and indium oxide (In2O3) thin films fabricated using Atomic Layer Deposition (ALD). The research focuses on understanding and manipulating the fundamental processes that govern the formation and properties of these semiconductor thin films. It explores how ALD parameters can be tuned to achieve desired film characteristics, addressing challenges in achieving specific crystal structures and controlled impurity levels essential for advanced electronic applications.

This book is a technical monograph likely aimed at researchers and advanced students in materials science and electrical engineering. The subject matter points to a dense, specialist text focusing on the experimental and theoretical aspects of semiconductor thin film fabrication. Its detailed examination of ALD processes for ZnO and In2O3 suggests it serves as a valuable reference for those working in the field of transparent conductive oxides and related semiconductor technologies.